DatasheetsPDF.com

LBAS16TT1G

Leshan Radio Company
Part Number LBAS16TT1G
Manufacturer Leshan Radio Company
Description Silicon Switching Diode
Published Jul 29, 2015
Detailed Description LESHAN RADIO COMPANY, LTD. Silicon Switching Diode FEATURE z We declare that the material of product compliance with Ro...
Datasheet PDF File LBAS16TT1G PDF File

LBAS16TT1G
LBAS16TT1G

Overview
LESHAN RADIO COMPANY, LTD.
Silicon Switching Diode FEATURE z We declare that the material of product compliance with RoHS requirements.
z S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
LBAS16TT1G S-LBAS16TT1G MAXIMUM RATINGS (TA = 25oC) Rating Continuous Reverse Voltage Recurrent Peak Forward Current Peak Forward Surge Current Pulse Width = 10 µs Total Power Dissipation, One Diode Loaded TA = 25°C Derate above 25°C Mounted on a Ceramic Substrate (10 x 8 x 0.
6 mm) Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient One Diode Loaded Mounted on a Ceramic Substrate (10 x 8 x 0.
6 mm) Symbol VR IR IFM(surge) PD TJ, Tstg Symbol RθJA Max 75 200 500 150 1.
6 –55 to +150 Max 0.
625 DEVICE MARKING LBAS16TT1G= A6 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Forward Voltage (IF = 1.
0 mA) (IF = 10 mA) (IF = 50 mA) (IF = 150 mA) Reverse Current (VR = 75 V) (VR = 75 V, TJ = 150°C) (VR = 25 V, TJ = 150°C) Capacitance (VR = 0, f = 1.
0 MHz) Reverse Recovery Time (IF = IR = 10 mA, RL = 50 Ω) (Figure 1) Stored Charge (IF = 10 mA to VR = 6.
0 V, RL = 500 Ω) (Figure 2) Forward Recovery Voltage (IF = 10 mA, tr = 20 ns) (Figure 3) ORDERING INFORMATION Device LBAS16TT1G S-LBAS16TT1G LBAS16TT3G S-LBAS16TT3G Marking A6 A6 Shipping 3000/Tape&Reel 10000/Tape&Reel Unit V mA mA mW mW/°C °C Unit °C/mW Symbol VF IR CD trr QS VFR SC-89 3 CATHODE 1 ANODE Min Max Unit mV — 715 — 866 — 1000 — 1250 µA — 1.
0 — 50 — 30 — 2.
0 pF — 6.
0 ns — 45 PC — 1.
75 V Rev.
O 1/4 LESHAN RADIO COMPANY, LTD.
1 ns MAX 10% 90% VF 100 ns t tif LBAS16TT1G, S-LBAS16TT1G trr Irr 500 Ω DUT DUTY CYCLE = 2% 50 Ω Figure 1.
Reverse Recovery Time Equivalent Test Circuit 20 ns MAX 10% 90% Vf 400 ns VC VCM t VCM + Qa C 500 Ω DUT OSCILLOSCOPE R .
10 MW C 3 7 pF BAW62 D1 243 pF 100 KΩ DUTY CYCLE = 2% ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)