NTTFS4C10N MOSFET – Power, Single, N-Channel, m8FL 30 V, 44 A Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • DC−DC Converters • Power Load Switch • Notebook Battery Management MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJA (Note 1) Power Dissipation (Note 1) RqJA TA = 25°C TA = 80°C TA = 25°C VDSS VGS ID PD 30 ±20 13.
3 9.
9 2.
09 V V A W Continuous Drain C(Nuortreen1t)RqJA ≤ 10 s TA ...

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