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NTTFS4C13N

ON Semiconductor
Part Number NTTFS4C13N
Manufacturer ON Semiconductor
Description Power MOSFET
Published Jul 31, 2015
Detailed Description NTTFS4C13N MOSFET – Power, Single, N-Channel, m8FL 30 V, 38 A Features • Low RDS(on) to Minimize Conduction Losses • L...
Datasheet PDF File NTTFS4C13N PDF File

NTTFS4C13N
NTTFS4C13N

Overview
NTTFS4C13N MOSFET – Power, Single, N-Channel, m8FL 30 V, 38 A Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • CPU Power Delivery • DC−DC Converters MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJA (Note 1) VDSS 30 V VGS ±20 V TA = 25°C ID 11.
7 A TA = 80°C 8.
5 Power Dissipation RqJA (Note 1) TA = 25°C PD 2.
06 W Continuous Drain Current RqJA ≤ 10 s (Note 1) TA = 25°C ID TA = 80°C 15.
8 A 11.
4 Power Dissipation TA = 25°C PD RqJA ≤ 10 s (Note 1) Steady Continuous Drain State TA = 25°C ID Current RqJA (Note 2) TA = 80°C 3.
73 W 7.
2 A 5.
2 Power Dissipation RqJA (Note 2) TA = 25°C PD 0.
78 W Continuous Drain Current RqJC (Note 1) TC = 25°C ID TC =80°C 38 A 27 Power Dissipation RqJC (Note 1) TC = 25°C PD 21.
5 W Pulsed Drain Current TA = 25°C, tp = 10 ms IDM 68 A Current Limited by Package TA = 25°C IDmax 70 A Operating Junction and Storage Temperature TJ, TSTG −55 to °C +150 Source Current (Body Diode) IS 19 A Drain to Source DV/DT dV/dt 7.
0 V/ns Single Pulse Drain−to−Source Avalanche Energy (TJ = 25°C, VGS = 10 V, IL = 4 Apk, L = 0.
1 mH, RGS = 25 W) (Note 3) EAS 22 mJ Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device.
If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
1.
Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2.
Surface−mounted on FR4 board using the minimum recommended pad size.
http://onsemi.
com V(BR)DSS 30 V RDS(ON) MAX 9.
4 mW @ 10 V 14 mW @ 4.
5 V D (5−8) ID MAX 38 A G (4) S (1,2,3) N−C...


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