NTMFS4H01NF
Power MOSFET
25 V, 334 A, Single N−Channel, SO−8FL
Features
• Integrated
Schottky Diode • Optimized Design to Minimize Conduction and Switching Losses • Optimized Package to Minimize Parasitic Inductances • Optimized material for improved thermal performance • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• High Performance DC-DC Converters • System Voltage Rails • Netcom, Telecom • Servers & Point of Load
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value
Units
Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current RqJA (TA = 25°C, Note 1)
VDSS VGS ID
25 ±20 54
V V A
Power Dissipation RqJA...