Ordering number : ENN8125 2SK3352 N-Channel Silicon MOSFET 2SK3352 General-Purpose Switching Device Applications Features • Low ON-resistance.
• Ultrahigh-speed switching.
• 4V drive.
• DC / DC converter applications.
Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Electrical Characteristics at Ta=25°C Conditions PW≤10µs, duty cycle≤1% Tc=25˚C Parameter Symbol Conditions Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current V(BR)DSS IDSS Gate-to-Source Leakage Curre...

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