Preliminary Datasheet
RJK03N8DNS
Silicon N Channel Power MOS FET with
Schottky Barrier Diode
Power Switching
R07DS0789EJ0100 Rev.
1.
00
Feb 29, 2012
Features
High speed switching Capable of 4.
5 V gate drive Low drive current High density mounting Low on-resistance
RDS(on) = 4.
6 m typ.
(at VGS = 8.
0 V) Pb-free Halogen-free
Outline
RENESAS Package code: PWSN0008JB-A (Package name: HWSON-8)
5 6 78
5 678 D DDD
4 321
4 G
1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain
S SS 1 23
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation ...