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RJK03N8DNS

Part Number	RJK03N8DNS
Manufacturer	Renesas Technology
Description	Silicon N Channel Power MOS FET
Published	Aug 7, 2015
Detailed Description	Preliminary Datasheet RJK03N8DNS Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching R07DS07...
Datasheet	RJK03N8DNS PDF File

Overview

Preliminary Datasheet RJK03N8DNS Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching R07DS0789EJ0100 Rev.
1.
00 Feb 29, 2012 Features  High speed switching  Capable of 4.
5 V gate drive  Low drive current  High density mounting  Low on-resistance RDS(on) = 4.
6 m typ.
(at VGS = 8.
0 V)  Pb-free  Halogen-free Outline RENESAS Package code: PWSN0008JB-A (Package name: HWSON-8) 5 6 78 5 678 D DDD 4 321 4 G 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S SS 1 23 Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation ...

Similar Datasheet

RJK03N8DNS Silicon N Channel Power MOS FET - Renesas Technology

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