N-Channel 60-V (D-S) MOSFET
B6010D
General Description
The B6010D is the N-Channel logic enhancement mode power field effect
transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package.
Pin Configuration
Features
RDS(ON)=90mΩ@VGS=10V RDS(ON)=120mΩ@VGS=4.
5V Super High Density Cell Design for Extremely Low RDS(ON) Exceptional On...