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B6010K

BiTEK
Part Number B6010K
Manufacturer BiTEK
Description N-channel MOSFET
Published Aug 7, 2015
Detailed Description N-Channel 60-V (D-S) MOSFET B6010K General Description The B6010K is the N-Channel logic enhancement mode power field ...
Datasheet PDF File B6010K PDF File

B6010K
B6010K

Overview
N-Channel 60-V (D-S) MOSFET B6010K General Description The B6010K is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package.
Pin Configuration Features RDS(ON)=90mΩ@VGS=10V RDS(ON)=120mΩ@VGS=4.
5V Super High Density Cell Design for Extremely Low RDS(ON) Exceptional On-Resistance and Maximum DC Current SOP-8 Package Applications Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC ℃Absolute Maximum Ratings (TA=25 Unless Otherwise Noted): Parameter Drain-Source Voltage Gate-Source Voltage ℃Continuous Drain Current(tJ=150 ) ℃TA=25 ℃TA=70 Pulsed Drain Current Continuous Source Current (Diode Conduction) ℃TA=25 Maximum Power Dissipation ℃TA=70 Operating Junction Temperature Thermal Resistance-Junction to Case Symbol VDSS VGSS ID IDM IS PD TJ RθJC N-Channel 60 ±20 3 2.
3 30 1.
7 2.
0 1.
44 -55 to 150 48 Unit V V A A A W ℃ ℃/W Confidential material for authorized user only and BiTEK reserves the utmost right upon the information contained herein.
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