Part Number
|
RJK0851DPB |
Manufacturer
|
Renesas Technology |
Description
|
Silicon N Channel Power MOS FET |
Published
|
Aug 10, 2015 |
Detailed Description
|
RJK0851DPB
80V, 20A, 23m max. Silicon N Channel Power MOS FET Power Switching
Preliminary Datasheet
R07DS0079EJ0200 Re...
|
Datasheet
|
RJK0851DPB
|
Overview
RJK0851DPB
80V, 20A, 23m max.
Silicon N Channel Power MOS FET Power Switching
Preliminary Datasheet
R07DS0079EJ0200 Rev.
2.
00
Apr 09, 2013
Functions
High speed switching Capable of 4.
5 V gate drive Low drive current High density mounting
Low on-resistance
RDS(on) = 18 m typ.
(at VGS = 10 V) Pb-free Halogen-free
Outline
RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK)
5 1 234
5 D
4 1, 2, 3 Source G 4 Gate
5 Drain
SSS 123
Application
Switching Mode Power Supply
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation...
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