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RJK0851DPB

Part Number	RJK0851DPB
Manufacturer	Renesas Technology
Description	Silicon N Channel Power MOS FET
Published	Aug 10, 2015
Detailed Description	RJK0851DPB 80V, 20A, 23m max. Silicon N Channel Power MOS FET Power Switching Preliminary Datasheet R07DS0079EJ0200 Re...
Datasheet	RJK0851DPB PDF File

Overview

RJK0851DPB 80V, 20A, 23m max.
Silicon N Channel Power MOS FET Power Switching Preliminary Datasheet R07DS0079EJ0200 Rev.
2.
00 Apr 09, 2013 Functions  High speed switching  Capable of 4.
5 V gate drive  Low drive current  High density mounting  Low on-resistance RDS(on) = 18 m typ.
(at VGS = 10 V)  Pb-free  Halogen-free Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) 5 1 234 5 D 4 1, 2, 3 Source G 4 Gate 5 Drain SSS 123 Application  Switching Mode Power Supply Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation...

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RJK0851DPB Silicon N Channel Power MOS FET - Renesas Technology

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