GE4953

GEMOS MOS FIELD EFFECT TRANSISTOR GE4953 P-CHANNEL MOS FIELD EFFECT TRANSISTOR DESCRIPTION The GE4953 uses advanced trench technology to provide excellent RDS(ON), low gate charge. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V). GENERAL FEATURES ● VDS = -30V,ID = -4.9A RDS(ON) 85...