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GE4953

GEMOS
Part Number GE4953
Manufacturer GEMOS
Description P-CHANNEL MOS FIELD EFFECT TRANSISTOR
Published Aug 13, 2015
Detailed Description GEMOS MOS FIELD EFFECT TRANSISTOR GE4953 P-CHANNEL MOS FIELD EFFECT TRANSISTOR DESCRIPTION The GE4953 uses advanced t...
Datasheet PDF File GE4953 PDF File

GE4953
GE4953

Overview
GEMOS MOS FIELD EFFECT TRANSISTOR GE4953 P-CHANNEL MOS FIELD EFFECT TRANSISTOR DESCRIPTION The GE4953 uses advanced trench technology to provide excellent RDS(ON), low gate charge.
It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.
5V – 25V).
GENERAL FEATURES ● VDS = -30V,ID = -4.
9A RDS(ON) < 85mΩ @ VGS=-4.
5V RDS(ON) < 53mΩ @ VGS=-10V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package APPLICATIONS ● Battery protection ● Load switch ● Power management Schematic diagram Marking and pin Assignment SOP-8 top view PACKAGE MARKING AND ORDERING INFORMATION Device Marking 4953 Device GE4953 Package SOP-8 Reel Size Ø330mm Tape width 12mm ABSOLUTE MAXIMUM RATLNGS(TA=25℃unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range Symbo...


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