NP50P03YDG
MOS FIELD EFFECT
TRANSISTOR
Preliminary Data Sheet
R07DS0019EJ0200 Rev.
2.
00
Mar 16, 2011
Description
The NP50P03YDG is P-channel MOS Field Effect
Transistor designed for high current switching applications.
Features
• Low on-state resistance ⎯ RDS(on) = 8.
4 mΩ MAX.
(VGS = −10 V, ID = −25 A)
• Low Ciss: Ciss = 2300 pF TYP.
(VDS = −25 V, VGS = 0 V) • Designed for automotive application and AEC-Q101 qualified • Small size package 8-pin HSON
Ordering Information
Part No.
NP50P03YDG -E1-AY ∗1 NP50P03YDG -E2-AY ∗1
LEAD PLATING Pure Sn (Tin)
PACKING Tape 2500 p/reel
Note: ∗1.
Pb-free (This product does not contain Pb in the external electrode.
)
Package 8-pin HSON, Taping (E1 type...