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NP50P03YDG

Renesas
Part Number NP50P03YDG
Manufacturer Renesas
Description MOS FIELD EFFECT TRANSISTOR
Published Aug 18, 2015
Detailed Description NP50P03YDG MOS FIELD EFFECT TRANSISTOR Preliminary Data Sheet R07DS0019EJ0200 Rev.2.00 Mar 16, 2011 Description The NP...
Datasheet PDF File NP50P03YDG PDF File

NP50P03YDG
NP50P03YDG

Overview
NP50P03YDG MOS FIELD EFFECT TRANSISTOR Preliminary Data Sheet R07DS0019EJ0200 Rev.
2.
00 Mar 16, 2011 Description The NP50P03YDG is P-channel MOS Field Effect Transistor designed for high current switching applications.
Features • Low on-state resistance ⎯ RDS(on) = 8.
4 mΩ MAX.
(VGS = −10 V, ID = −25 A) • Low Ciss: Ciss = 2300 pF TYP.
(VDS = −25 V, VGS = 0 V) • Designed for automotive application and AEC-Q101 qualified • Small size package 8-pin HSON Ordering Information Part No.
NP50P03YDG -E1-AY ∗1 NP50P03YDG -E2-AY ∗1 LEAD PLATING Pure Sn (Tin) PACKING Tape 2500 p/reel Note: ∗1.
Pb-free (This product does not contain Pb in the external electrode.
) Package 8-pin HSON, Taping (E1 type...


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