MUN2211

MUN2211 : This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SOT-23 package which is designed for low power surface mount applications. FEATURES  Simplifies Circuit Design  Reduces Board Space and Component Count  The SOT-23 package can be soldered using wave or reflow. The modified gull-winged leads absorb thermal stress during soldering eliminating th.

MUN2211 : NPN Silicon Bias Resistor Transistor MUN2211 Series 3 R1 R2 1 2 SC-59 WEITRON http://www.weitron.com.tw Rev.A 23-Jan-09 MUN2211 Series ELECTRICALCHARACTERISTICS (TA = 25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS C ollector-B as e C utoff C urrent (V C B = 50 V, IE = 0) C ollector-E mitter C utoff C urrent (V C E = 50 V, IB = 0) E mitter-B as e C utoff C urrent (VE B = 6.0 V, IC = 0) MU N 2 2 11 MUN2212 MUN2213 MUN2214 MUN2215 MUN2216 MUN2230 MUN2231 MUN2232 MUN2233 MUN2234 MUN2236 MUN2237 MUN2240 MUN2241 IC B O ICE O IE BO - - - - 100 nAdc - 500 nAdc - 0.5 mAdc - 0.2 - 0.1 - 0.2 - 0.9 - 1.9 - 4.3 - 2.3 - 1.5 - 0.18 - 0.13 - 0.05 - 0.1.

MUN2211 : DATA SHEET SEMICONDUCTOR Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SOT-23 package which is designed for low power surface mount applications. • Simplifies Circuit Design • Reduces Board Space and Component Count • The SOT-23 package can be .

MUN2211 : SMD Type Transistors NPN Transistors MUN2211 ~ MUN2234 ■ Features ● Collector Current Capability IC=100mA ● Collector Emitter Voltage VCEO=50V PIN1 base (Input) R1 R2 PIN3 Collector (Output) PIN2 Emitter (Ground) +0.12.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.10.97 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1 +0.05 -0.01 1.Base 2.Emitter 3.collector 0-0.1 +0.10.38 -0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Collector Power Dissipation Derate above 25°C Thermal Resistance Junction-to-Ambient Junction Temperature Storage Temperature R.

MUN2211RT1 : Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC–59 package which is designed for low power surface mount applications. • Simplifies Circuit Design • Reduces Board Space • R.

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MUN2211T1 : MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MUN2211T1/D Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC–59 package which is designed for low power surf.

MUN2211T1 : MUN2211T1 Series Preferred Devices Bias Resistor Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC−59 package which is designed for low power surface mount applications. Features • Simpl.

MUN2211T1G : Digital Transistors (BRT) R1 = 10 kW, R2 = 10 kW NPN Transistors with Monolithic Bias Resistor Network MUN2211, MMUN2211L, MUN5211, DTC114EE, DTC114EM3, NSBC114EF3 This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base− emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. Features • Simplifies Circuit Design • Reduces Board Space • Reduces Component Count • S a.

MUN2212 : This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SOT-23 package which is designed for low power surface mount applications. FEATURES  Simplifies Circuit Design  Reduces Board Space and Component Count  The SOT-23 package can be soldered using wave or reflow. The modified gull-winged leads absorb thermal stress during soldering eliminating th.

MUN2212 : MUN2212, MMUN2212L, MUN5212, DTC124EE, DTC124EM3, NSBC124EF3 Digital Transistors (BRT) R1 = 22 kW, R2 = 22 kW NPN Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base− emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. Features • Simplifies Circuit Design • Reduces Board Space • Reduces Component Count • S and.

MUN2212 : NPN Silicon Bias Resistor Transistor MUN2211 Series 3 R1 R2 1 2 SC-59 WEITRON http://www.weitron.com.tw Rev.A 23-Jan-09 MUN2211 Series ELECTRICALCHARACTERISTICS (TA = 25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS C ollector-B as e C utoff C urrent (V C B = 50 V, IE = 0) C ollector-E mitter C utoff C urrent (V C E = 50 V, IB = 0) E mitter-B as e C utoff C urrent (VE B = 6.0 V, IC = 0) MU N 2 2 11 MUN2212 MUN2213 MUN2214 MUN2215 MUN2216 MUN2230 MUN2231 MUN2232 MUN2233 MUN2234 MUN2236 MUN2237 MUN2240 MUN2241 IC B O ICE O IE BO - - - - 100 nAdc - 500 nAdc - 0.5 mAdc - 0.2 - 0.1 - 0.2 - 0.9 - 1.9 - 4.3 - 2.3 - 1.5 - 0.18 - 0.13 - 0.05 - 0.1.

MUN2212 : DATA SHEET SEMICONDUCTOR Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SOT-23 package which is designed for low power surface mount applications. • Simplifies Circuit Design • Reduces Board Space and Component Count • The SOT-23 package can be .

MUN2212 : SMD Type Transistors NPN Transistors MUN2211 ~ MUN2234 ■ Features ● Collector Current Capability IC=100mA ● Collector Emitter Voltage VCEO=50V PIN1 base (Input) R1 R2 PIN3 Collector (Output) PIN2 Emitter (Ground) +0.12.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.10.97 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1 +0.05 -0.01 1.Base 2.Emitter 3.collector 0-0.1 +0.10.38 -0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Collector Power Dissipation Derate above 25°C Thermal Resistance Junction-to-Ambient Junction Temperature Storage Temperature R.

MUN2212RT1 : Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC–59 package which is designed for low power surface mount applications. • Simplifies Circuit Design • Reduces Board Space • R.

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