Transistors
2SC2632
Silicon
NPN epitaxial planar type
For low-frequency high breakdown voltage amplification Complementary to 2SA1124
5.
9±0.
2
Unit: mm
4.
9±0.
2
8.
6±0.
2
■ Features
• Satisfactory linearity of forward current transfer ratio hFE
13.
5±0.
5 0.
7–+00.
.
23
• High collector-emitter voltage (Base open) VCEO
0.
7±0.
1
• Small collector output capacitance (Common base, input open cir-
cuited) Cob
/ ■ Absolute Maximum Ratings Ta = 25°C
e Parameter
Symbol Rating
Unit
c type) Collector-base voltage (Emitter open) VCBO
150
V
n d ge.
ed Collector-emitter voltage (Base open) VCEO
150
(3.
2)
V
sta tinu Emitter-base voltage (Collector open) VEBO
5
V
a e cycle iscon Collector ...