NTB6412AN, NTP6412AN, NVB6412AN N-Channel Power MOSFET 100 V, 58 A, 18.
2 mW Features • Low RDS(on) • High Current Capability • 100% Avalanche Tested • NVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C Unless otherwise specified) Parameter Symbol Value Drain−to−Source Voltage Gate−to−Source Voltage − Continuous Continuous Drain Current RqJC Power Dissipation RqJC Steady State Steady State TC = 25°C TC = 100°C TC = 25°C Pulsed Drain Current tp = 10 ms Operating Junction and Storage Temperature Range VDSS VGS ID PD I...

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)