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NVB6412AN

ON Semiconductor
Part Number NVB6412AN
Manufacturer ON Semiconductor
Description N-Channel Power MOSFET
Published Aug 22, 2015
Detailed Description NTB6412AN, NTP6412AN, NVB6412AN N-Channel Power MOSFET 100 V, 58 A, 18.2 mW Features • Low RDS(on) • High Current Capab...
Datasheet PDF File NVB6412AN PDF File

NVB6412AN
NVB6412AN

Overview
NTB6412AN, NTP6412AN, NVB6412AN N-Channel Power MOSFET 100 V, 58 A, 18.
2 mW Features • Low RDS(on) • High Current Capability • 100% Avalanche Tested • NVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C Unless otherwise specified) Parameter Symbol Value Drain−to−Source Voltage Gate−to−Source Voltage − Continuous Continuous Drain Current RqJC Power Dissipation RqJC Steady State Steady State TC = 25°C TC = 100°C TC = 25°C Pulsed Drain Current tp = 10 ms Operating Junction and Storage Temperature Range VDSS VGS ID PD IDM TJ, Tstg 100 $20 58 41 167 240 −55 to +175 Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (VDD = 50 Vdc, VGS = 10 Vdc, IL(pk) = 44.
7 A, L = 0.
3 mH, RG = 25 W) Lead Temperature for Soldering Purposes, 1/8″ from Case for 10 Seconds IS 58 EAS 300 TL 260 Unit V V A W A ...


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