|
Part Number
|
IRF7420PbF |
|
Manufacturer
|
International Rectifier |
|
Description
|
HEXFET Power MOSFET |
|
Published
|
Aug 24, 2015 |
|
Detailed Description
|
l Ultra Low On-Resistance l P-Channel MOSFET l Surface Mount l Available in Tape & Reel l Lead-Free
VDSS
-12V
PD - 956...
|
|
Datasheet
|
IRF7420PbF
|
Overview
l Ultra Low On-Resistance l P-Channel MOSFET l Surface Mount l Available in Tape & Reel l Lead-Free
VDSS
-12V
PD - 95633A
IRF7420PbF
HEXFET® Power MOSFET
RDS(on) max
14mΩ@VGS = -4.
5V 17.
5mΩ@VGS = -2.
5V 26mΩ@VGS = -1.
8V
ID
-11.
5A -9.
8A -8.
1A
Description
These P-Channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing
S
1
techniques to achieve the extremely low on-resistance S 2
per silicon area.
This benefit provides the designer with an extremely efficient device for use in battery S 3
and load management applications.
.
G4
A 8D 7D 6D 5D
The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die c...
Similar Datasheet