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IRF7420PbF

International Rectifier
Part Number IRF7420PbF
Manufacturer International Rectifier
Description HEXFET Power MOSFET
Published Aug 24, 2015
Detailed Description l Ultra Low On-Resistance l P-Channel MOSFET l Surface Mount l Available in Tape & Reel l Lead-Free VDSS -12V PD - 956...
Datasheet PDF File IRF7420PbF PDF File

IRF7420PbF
IRF7420PbF


Overview
l Ultra Low On-Resistance l P-Channel MOSFET l Surface Mount l Available in Tape & Reel l Lead-Free VDSS -12V PD - 95633A IRF7420PbF HEXFET® Power MOSFET RDS(on) max 14mΩ@VGS = -4.
5V 17.
5mΩ@VGS = -2.
5V 26mΩ@VGS = -1.
8V ID -11.
5A -9.
8A -8.
1A Description These P-Channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing S 1 techniques to achieve the extremely low on-resistance S 2 per silicon area.
This benefit provides the designer with an extremely efficient device for use in battery S 3 and load management applications.
.
G4 A 8D 7D 6D 5D The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications.
With these improvements, multiple devices can be used in an application with dramatically reduced board space.
The package is designed for vapor phase, infrared, or wave soldering techniques.
Top View SO-8 Absolute Maximum Ratings VDS ID @ TA = 25°C ID @ TA= 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS TJ, TSTG Parameter Drain- Source Voltage Continuous Drain Current, VGS @ -4.
5V Continuous Drain Current, VGS @ -4.
5V Pulsed Drain Current  Power Dissipation ƒ Power Dissipation ƒ Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Max.
-12 -11.
5 -9.
2 -46 2.
5 1.
6 20 ±8 -55 to +150 Units V A W mW/°C V °C Thermal Resistance RθJA www.
irf.
com Parameter Maximum Junction-to-Ambientƒ Max.
50 Units °C/W 1 8/25/06 IRF7420PbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter V(BR)DSS Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp.
Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge...


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