Ordering number : ENA1806 FW812 SANYO Semiconductors DATA SHEET FW812 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • Low ON-resistance • 4V drive • Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW=10s) Drain Current (PW≤10μs) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID ID IDP PD PT Tch Tstg Conditions Duty cycle≤1% Duty cycle≤1% When mounted on ceramic substrate (2000mm2×0.
8mm) 1unit, PW≤10s When mo...

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