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FW813

Sanyo
Part Number FW813
Manufacturer Sanyo
Description N-Channel Silicon MOSFET
Published Aug 25, 2015
Detailed Description Ordering number : ENA1884 FW813 SANYO Semiconductors DATA SHEET FW813 N-Channel Silicon MOSFET General-Purpose Switc...
Datasheet PDF File FW813 PDF File

FW813
FW813

Overview
Ordering number : ENA1884 FW813 SANYO Semiconductors DATA SHEET FW813 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • ON-resistance RDS(on)1=39mΩ (typ.
) • 4V drive • Nch + Nch MOSFET Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg Conditions PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (2000mm2×0.
8mm) 1unit, PW≤10s When mounted on ceramic substrate (2000mm2×0.
8mm), PW≤10s Ratings 60 ±20 5 52 2.
3 2.
5 150 --55 to +150 Unit V V A A W W °C °C Package Dimensions unit : mm (typ) 7005A-003 5.
0 85 0.
2 Product & Package Information • Package : SOP8 • JEITA, JEDEC : SC-87, SOT96 • Minimum Packing Quantity : 1,000 pcs.
/reel Packing Type : TL Marking 1.
8 MAX 1.
5 6.
0 0.
7 0.
8 4.
4 0.
8 0.
3 1 1.
27 0.
1 1 : Source1 TL 2 : Gate1 3 : Source2 4 4 : Gate2 0.
43 5 : Drain2 6 : Drain2 Electrical Connection 7 : Drain1 8 : Drain1 8765 SANYO : SOP8 W813 LOT No.
1234 http://semicon.
sanyo.
com/en/network D0810PA TKIM TC-00002348 No.
A1884-1/4 Electrical Characteristics at Ta=25°C FW813 Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions ID=1mA, VGS=0V VDS=60V, VGS=0V VGS=±16V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=5A ID=5A, VGS=10V ID=3A, VGS=4.
5V ID=3A, VGS=4V VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz...


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