Part Number
|
IXFL60N60 |
Manufacturer
|
IXYS Corporation |
Description
|
MOSFET |
Published
|
Aug 31, 2015 |
Detailed Description
|
HiPerFETTM Power MOSFETs
ISOPLUS264TM
IXFL 60N60
(Electrically Isolated Backside)
Single Die MOSFET
VDSS ID25
RDS(o...
|
Datasheet
|
IXFL60N60
|
Overview
HiPerFETTM Power MOSFETs
ISOPLUS264TM
IXFL 60N60
(Electrically Isolated Backside)
Single Die MOSFET
VDSS ID25
RDS(on)
= 600 V
= 60 A = 80 mΩ
Preliminary Data Sheet
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt
PD
FC TJ TJM Tstg
VISOL
Md
Weight
Symbol
VDSS VGH(th) IGSS IDSS
RDS(on)
Test Conditions
TJ= 25°C to 150°C TJ= 25°C to 150°C; RGS = 1 MΩ Continuous Transient
TC= 25°C, Chip capability TC= 25°C, pulse width limited by TJM TC= 25°C TC= 25°C TC= 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC= 25°C
Mouting Force
Maximum Ratings
600 V 600 V ±20 V ±30 V
60 A 240 A
60 A 64 mJ
4J 5 V/ns
700
30.
.
.
150/7.
.
.
33 -55 .
.
.
+150 150 -55 .
.
.
+150
W
N/lb °C °C °C
5...
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