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IXFL60N80P

IXYS Corporation
Part Number IXFL60N80P
Manufacturer IXYS Corporation
Description PolarHV HiPerFET Power MOSFET ISOPLUS264
Published May 13, 2011
Detailed Description PolarHVTM HiPerFET Power MOSFET ISOPLUS264TM (Electrically Isolated Back Surface) IXFL 60N80P VDSS ID25 = 800 V = 40 ...
Datasheet PDF File IXFL60N80P PDF File

IXFL60N80P
IXFL60N80P

Overview
PolarHVTM HiPerFET Power MOSFET ISOPLUS264TM (Electrically Isolated Back Surface) IXFL 60N80P VDSS ID25 = 800 V = 40 A RDS(on) ≤ 150 mΩ ≤ 250 ns trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL www.
DataSheet4U.
net Test Conditions TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ Continuous Transient TC = 25° C TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C TC = 25° C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤150° C, RG = 2 Ω TC = 25° C Maximum Ratings 800 800 ±30 ±40 40 150 30 100 5 20 625 -55 .
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+150 150 -55 .
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+150 V V V V A A A mJ J V/ns W °C °C °C °C ISOPLUS264 TM (IXFL) G D S (Isolated Tab) D = Drain G = Gate S = Source Features l l International standard isolated package UL recognized package Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Unclamped Inductive Switching (UIS) rat...


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