Part Number
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FSS13A0R |
Manufacturer
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Intersil Corporation |
Description
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N-Channel Power MOSFETs |
Published
|
Mar 23, 2005 |
Detailed Description
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TM
Data Sheet
FSS13A0D, FSS13A0R
June 2000 File Number 4487.3
2A, 100V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel...
|
Datasheet
|
FSS13A0R
|
Overview
TM
Data Sheet
FSS13A0D, FSS13A0R
June 2000 File Number 4487.
3
2A, 100V, 0.
170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.
Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space environments.
The dose rate and neutron tolerance necessary for military applications have not been sacrificed.
The Intersil portfolio of SEGR resistant radiation harden...
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