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FSS13A0D

Intersil Corporation
Part Number FSS13A0D
Manufacturer Intersil Corporation
Description N-Channel Power MOSFETs
Published Mar 23, 2005
Detailed Description TM Data Sheet FSS13A0D, FSS13A0R June 2000 File Number 4487.3 2A, 100V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel...
Datasheet PDF File FSS13A0D PDF File

FSS13A0D
FSS13A0D

Overview
TM Data Sheet FSS13A0D, FSS13A0R June 2000 File Number 4487.
3 2A, 100V, 0.
170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.
Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space environments.
The dose rate and neutron tolerance necessary for military applications have not been sacrificed.
The Intersil portfolio of SEGR resistant radiation hardened MOSFETs includes N-Channel and P-Channel devices in a variety of voltage, current and on-resistance ratings.
Numerous packaging options are also available.
This MOSFET is an enhancement-mode silicon-gate power field-effect transistor of the vertical DMOS (VDMOS) structure.
It is specially de...


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