RoHS
2SC2786
NPN EPITAXIAL SILICON
TRANSISTOR
PRE-AMPLIFIER,LOW LEVEL&LOW NOISE * Complement to S9015LT1 * Collector Current: Ic= 100mA
D* Collector-Emitter Voltage:Vce= 45V
* High Total Power Dissipation:Pc=225mW
T* High Hfe And Good Linearity
.
,LABSOLUTE MAXIMUM RATINGS at Ta=25
Characteristic
Symbol Rating
Collector-Base Voltage
Vcbo
50
OCollector-Emitter Voltage
Vceo
45
2.
9 1.
9 0.
95 0.
95 0.
4
Emitter-Base Voltage
Vebo
5
CCollector Current
Ic 100
Collector Dissipation Ta=25 *
PD 225
ICJunction Temperature
Tj 150
Storage Temperature
Tstg -55-150
Unit V V V mA
mW
1.
2.
4 1.
3
1.
BASE 2.
EMITTER 3.
COLLECTOR
Unit:mm
NELECTRICAL CHARACTERISTICS at Ta=25
Characteristic
...