CEP13N5/CEB13N5 CEF13N5
N-Channel Enhancement Mode Field Effect
Transistor
FEATURES
Type CEP13N5 CEB13N5 CEF13N5
VDSS 500V 500V
500V
RDS(ON) 0.
48Ω 0.
48Ω
0.
48Ω
ID 13A 13A 13A d
@VGS 10V 10V
10V
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
D
DG
G S
CEB SERIES TO-263(DD-PAK)
G D S
CEP SERIES TO-220
G
D S CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C Drain Current-Continuous @ TC = 100 C Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C Single Pulsed Avalanche Energy h Single Pulse...