DatasheetsPDF.com

CEF13N5A

CET
Part Number CEF13N5A
Manufacturer CET
Description N-Channel Enhancement Mode Field Effect Transistor
Published Jan 24, 2016
Detailed Description CEP13N5A/CEB13N5A CEF13N5A N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP13N5A CEB13N5A CEF13N5A...
Datasheet PDF File CEF13N5A PDF File

CEF13N5A
CEF13N5A


Overview
CEP13N5A/CEB13N5A CEF13N5A N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP13N5A CEB13N5A CEF13N5A VDSS 500V 500V 500V RDS(ON) 0.
48Ω 0.
48Ω 0.
48Ω ID 13A 13A 13A d @VGS 10V 10V 10V Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead-free plating ; RoHS compliant.
D DG G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C @ TC = 100 C Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Single Pulsed Avalanche Energy h Single Pulsed Avalanche Current h Operating and Store Temperature Range Tc = 25 C unless otherwise noted Symbol Limit TO-220/263 TO-220F VDS 500 VGS ±30 ID 13 13 d 8 8d IDM e 52 52d 208 52 PD 1.
7 0.
4 EAS 542 IAS 8.
5 TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 0.
6 62.
5 2.
4 65 Units V V A A A W W/ C mJ A C Units C/W C/W Details are subject to change without notice .
1 Rev 2.
2013.
Feb http://www.
cetsemi.
com CEP13N5A/CEB13N5A CEF13N5A Electrical Characteristics Tc = 25 C unless otherwise noted Parameter Symbol Test Condition Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b BVDSS IDSS IGSSF IGSSR VGS = 0V, ID = 250µA VDS =500V, VGS = 0V VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V Gate Threshold Voltage Static Drain-Source On-Resistance VGS(th) RDS(on) VGS = VDS, ID = 250µA VGS = 10V, ID = 6.
5A Dynamic Characteristics c Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c Ciss Coss Crss VDS = 25V, VGS = 0V, f = 1.
0 MHz Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time td(on) tr td(off) VDD = 250V, ...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)