CEP830G/CEB830G CEF830G
N-Channel Enhancement Mode Field Effect
Transistor
FEATURES
Type CEP830G CEB830G
VDSS 500V 500V
CEF830G
500V
RDS(ON) 1.
5Ω 1.
5Ω 1.
5Ω
ID @VGS 5A 10V 5A 10V 5A e 10V
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
D
G
D
G S
CEB SERIES TO-263(DD-PAK)
G D S
CEP SERIES TO-220
G
D S CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
TO-220/263
TO-220F
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a
VDS VGS ID IDM f
500
±30
5 20
5e 20 e
Maximum Power Dissipation @ TC = 25 C - Dera...