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CEB830G

CET
Part Number CEB830G
Manufacturer CET
Description N-Channel MOSFET
Published Sep 22, 2015
Detailed Description CEP830G/CEB830G CEF830G N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP830G CEB830G VDSS 500V 50...
Datasheet PDF File CEB830G PDF File

CEB830G
CEB830G

Overview
CEP830G/CEB830G CEF830G N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP830G CEB830G VDSS 500V 500V CEF830G 500V RDS(ON) 1.
5Ω 1.
5Ω 1.
5Ω ID @VGS 5A 10V 5A 10V 5A e 10V Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
D G D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit TO-220/263 TO-220F Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a VDS VGS ID IDM f 500 ±30 5 20 5e 20 e Maximum Power Dissipation @ TC = 25 C - Derate above 25 C 83 42 PD 0.
66 0.
33 Single Pulsed Avalanche Energy g EAS 39.
2 Single Pulsed Avalanche Current g Operating and Store Temperature Range IAS TJ,Tstg 2.
8 -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 1.
5 62.
5 3.
6 65 Units V V A A W W/ C mJ A C Units C/W C/W Details are subject to change without notice .
1 Rev 2.
2014.
Sep.
http://www.
cet-mos.
com CEP830G/CEB830G CEF830G Electrical Characteristics Tc = 25 C unless otherwise noted Parameter Symbol Test Condition Min Typ Max Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b BVDSS IDSS IGSSF IGSSR VGS = 0V, ID = 250µA VDS = 500V, VGS = 0V VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V 500 1 100 -100 V µA nA nA Gate Threshold Voltage Static Drain-Source On-Resistance VGS(th) RDS(on) VGS = VDS, ID = 250µA 2.
5 4 VGS = 10V, ID = 2.
5A 1.
2 1.
5 V Ω Dynamic Characteristics c Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c Ciss Coss VDS = 25V, VGS = 0V, f = 1.
0 MHz 595 90 pF pF Crss 20 pF Turn-On Delay Time Turn-On Rise Time Turn-...


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