CEP02N7G/CEB02N7G CEF02N7G
N-Channel Enhancement Mode Field Effect
Transistor
FEATURES
Type CEP02N7G CEB02N7G CEF02N7G
VDSS 700V 700V
700V
RDS(ON) 6.
75Ω 6.
75Ω
6.
75Ω
ID 2A 2A 2A d
@VGS 10V 10V
10V
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
D
DG
G S
CEB SERIES TO-263(DD-PAK)
G D S
CEP SERIES TO-220
G
D S CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C
@ TC = 100 C Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C Single Pulsed Avalanche Energy h Single Pulsed Avalanche Current h ...