DatasheetsPDF.com

CEF02N6

CET
Part Number CEF02N6
Manufacturer CET
Description N-Channel MOSFET
Published Jun 11, 2014
Detailed Description CEF02N6 Sep. 2002 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES 600V , 1.5A , RDS(ON)=5 Ω @VG...
Datasheet PDF File CEF02N6 PDF File

CEF02N6
CEF02N6

Overview
CEF02N6 Sep.
2002 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES 600V , 1.
5A , RDS(ON)=5 Ω @VGS=10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handling capability.
TO-220F full-pak for through hole D 6 G G D S S TO-220F ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed Drain-Source Diode Forward Current Maximum Power Dissipation @Tc=25 C Derate above 25 C Operating and Storage Temperautre Range Symbol VDS VGS ID IDM IS PD TJ,T STG Limit 600 Unit V V A A A W W/ C C Ć 30 1.
5 4.
5 4.
5 29 0.
23 -65 to 150 THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient RįJC RįJA 6-117 4.
3 65 C/W C/W http://www.
Datasheet4U.
com CEF02N6 ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted) Parameter Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current Symbol a ...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)