Part Number
|
HM12N60F |
Manufacturer
|
H&M Semiconductor |
Description
|
600V N-Channel MOSFET |
Published
|
Sep 30, 2015 |
Detailed Description
|
HM12N60 / HM12N60F
600V N-Channel MOSFET
General Description
This Power MOSFET is produced using SL semi‘s advanced pla...
|
Datasheet
|
HM12N60F
|
Overview
HM12N60 / HM12N60F
600V N-Channel MOSFET
General Description
This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology.
Features
• 12.
0A, 600V, RDS(on) = 0.
65Ω @VGS = 10 V • Low gate charge ( typical 52nC) • High ruggedness • Fast switching • 100% avalanche tested • Improved dv/dt capability
{D
GDS
TO-220
GD S
TO-220F
●
◀▲ ...
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