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HM12N60F

H&M Semiconductor
Part Number HM12N60F
Manufacturer H&M Semiconductor
Description 600V N-Channel MOSFET
Published Sep 30, 2015
Detailed Description HM12N60 / HM12N60F 600V N-Channel MOSFET General Description This Power MOSFET is produced using SL semi‘s advanced pla...
Datasheet PDF File HM12N60F PDF File

HM12N60F
HM12N60F

Overview
HM12N60 / HM12N60F 600V N-Channel MOSFET General Description This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology.
Features • 12.
0A, 600V, RDS(on) = 0.
65Ω @VGS = 10 V • Low gate charge ( typical 52nC) • High ruggedness • Fast switching • 100% avalanche tested • Improved dv/dt capability {D GDS TO-220 GD S TO-220F ● ◀▲ ...


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