CET6601
P-Channel Enhancement Mode Field Effect
Transistor
FEATURES
-60V, -4.
3A, RDS(ON) = 86mΩ @VGS = -10V.
RDS(ON) = 125mΩ @VGS = -4.
5V.
High dense cell design for extremely low RDS(ON).
Rugged and reliable.
Lead free product is acquired.
SOT-223 package.
D
DS D
G
SOT-223
G
S
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage
VDS -60
VGS ±20
Drain Current-Continuous Drain Current-Pulsed a
ID -4.
3 IDM -17.
2
Maximum Power Dissipation
PD 3
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Ambient b
Symbol RθJA
Limit 42
Units V V ...