DatasheetsPDF.com

CET6601

CET
Part Number CET6601
Manufacturer CET
Description P-Channel MOSFET
Published Oct 2, 2015
Detailed Description CET6601 P-Channel Enhancement Mode Field Effect Transistor FEATURES -60V, -4.3A, RDS(ON) = 86mΩ @VGS = -10V. RDS(ON) = ...
Datasheet PDF File CET6601 PDF File

CET6601
CET6601

Overview
CET6601 P-Channel Enhancement Mode Field Effect Transistor FEATURES -60V, -4.
3A, RDS(ON) = 86mΩ @VGS = -10V.
RDS(ON) = 125mΩ @VGS = -4.
5V.
High dense cell design for extremely low RDS(ON).
Rugged and reliable.
Lead free product is acquired.
SOT-223 package.
D DS D G SOT-223 G S ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS -60 VGS ±20 Drain Current-Continuous Drain Current-Pulsed a ID -4.
3 IDM -17.
2 Maximum Power Dissipation PD 3 Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 42 Units V V ...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)