CEM3317
P-Channel Enhancement Mode Field Effect
Transistor
PRELIMINARY
FEATURES
-30V, -6.
2A, RDS(ON) = 33mΩ @VGS = -10V.
RDS(ON) = 52mΩ @VGS = -4.
5V.
-30V, -4.
9A, RDS(ON) = 52mΩ @VGS = -10V.
RDS(ON) = 85mΩ @VGS = -4.
5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
Surface mount Package.
SO-8
1
D1 D1 D2 D2 876 5
123 4 S1 G1 S2 G2
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Channel 1
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a
VDS -30
VGS ±20
ID -6.
2 IDM -25
Channel 2 -30
±20
-4.
9 -20
Maximum Power Dissipation
PD 2.
0
O...