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CEM3301

CET
Part Number CEM3301
Manufacturer CET
Description P-Channel Enhancement Mode Field Effect Transistor
Published May 6, 2007
Detailed Description P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -7.0A, RDS(ON) = 32mΩ @VGS = -10V. RDS(ON) = 50mΩ @VGS...
Datasheet PDF File CEM3301 PDF File

CEM3301
CEM3301

Overview
P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -7.
0A, RDS(ON) = 32mΩ @VGS = -10V.
RDS(ON) = 50mΩ @VGS = -4.
5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
Surface mount Package.
D 8 CEM3301 D 7 D 6 D 5 SO-8 1 1 S 2 S 3 S 4 G ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg Limit -30 Units V V A A W C ±20 -7.
0 -25 2.
5 -55 to 150 Maximum Power Dissipation Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 50 Units C/W Details are subject to change without notice .
1 Rev 2.
2007.
Jan http://www.
cetsemi.
com CEM3301 Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics c Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0V, IS = -1A VDS = -15V, ID = -5.
3A, VGS = -10V VDD = -15V, ID = -1A, VGS = -10V, RGEN = 6Ω 13 6 58 22 19 4.
0 2.
5 -7 -1.
2 26 12 115 45 25 ns ns ns ns nC nC nC A V gFS Ciss Coss Crss VDS = -10V, ID = -8A VDS = -15V, VGS = 0V, f = 1.
0 MHz 9 1150 250 150 S pF pF pF VGS(th) RDS(on) VGS = VDS, ID = -250µA VGS = -10V, ID = -8A VGS = -4.
5V, ID = -5A -1 26 38 -3 32 50 V mΩ mΩ BVDSS IDSS IGSSF IGSSR VGS = 0V, ID = -250µA VDS = -30V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V -...


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