RJK60S3DPD 600V - 12A - SJ MOS FET High Speed Power Switching Preliminary Datasheet R07DS0731EJ0300 Rev.
3.
00 Oct 12, 2012 Features  Superjunction MOSFET  Low on-resistance RDS(on) = 0.
35  typ.
(at ID = 6 A, VGS = 10 V, Ta = 25C)  High speed switching tf = 21 ns typ.
(at ID = 6 A, VGS = 10 V, RL = 50 , Rg = 10 , Ta = 25C) Outline RENESAS Package code: PRSS0004ZG-A (Package name : MP-3A) 4 D 12 3 1.
Gate G 2.
Drain 3.
Source 4.
Drain S Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Tc = 25C Tc = 100C Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Ava...

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