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RJK60S3DPP-E0

Part Number	RJK60S3DPP-E0
Manufacturer	Renesas
Description	600V - 12A - SJ MOS FET High Speed Power Switching
Published	May 8, 2015
Detailed Description	Preliminary Datasheet RJK60S3DPP-E0 600V - 12A - SJ MOS FET High Speed Power Switching R07DS0637EJ0300 Rev.3.00 Oct 12...
Datasheet	RJK60S3DPP-E0 PDF File

Overview

Preliminary Datasheet RJK60S3DPP-E0 600V - 12A - SJ MOS FET High Speed Power Switching R07DS0637EJ0300 Rev.
3.
00 Oct 12, 2012 Features  Superjunction MOSFET  Low on-resistance RDS(on) = 0.
35  typ.
(at ID = 6 A, VGS = 10 V, Ta = 25C)  High speed switching tf = 21 ns typ.
(at ID = 6 A, VGS = 10 V, RL = 50 , Rg = 10 , Ta = 25C) Outline RENESAS Package code: PRSS0003AG-A (Package name: TO-220FP) D 1.
Gate G 2.
Drain 3.
Source 1 23 S Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Tc = 25C Tc = 100C Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1.
Limited by Tch max.
2.
Maximum duty cycle D = 0.
75 3.
STch = 25C, Tch  150C 4.
Value at Tc = 25C Symbol VDSS VGSS ID Note1,2 ID Note1,2 ID Note1 (pulse) IDR Note1 IDR Note1 (pulse) IAPNote3 EARNote3 Pch Note4 ch-c Tch Tstg Ratings 600 +30, 20 12.
0 7.
6 24 12 24 3 0.
49 27.
7 4.
5 150 –55 to +150 (Ta = 25°C) Unit V V A A A A A A mJ W C/W C C R07DS0637EJ0300 Rev.
3.
00 Oct 12, 2012 Page 1 of 7 RJK60S3DPP-E0 Electrical Characteristics Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Symbol V(BR)DSS IDSS IGSS VGS(off) RDS(on) RDS(on) Min 600 — — 3 — — Gate resistance Rg — Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body-drain diode forward voltage Body-drain diode reverse recovery time Body-drain diode reverse recovery current Body-drain diode reverse recovery charge Notes: 5.
Pulse test Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDF trr Irr Qrr — — — — — — — — — — — ...

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RJK60S3DPP-E0 600V - 12A - SJ MOS FET High Speed Power Switching - Renesas

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