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Part Number
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FQA8N90C_F109 |
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Manufacturer
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Fairchild Semiconductor |
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Description
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N-Channel QFET MOSFET |
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Published
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Oct 14, 2015 |
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Detailed Description
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FQA8N90C_F109 — N-Channel QFET® MOSFET
FQA8N90C_F109
N-Channel QFET® MOSFET
900 V, 8 A, 1.9 Ω Features
• 8 A, 900 V, RD...
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Datasheet
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FQA8N90C_F109
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Overview
FQA8N90C_F109 — N-Channel QFET® MOSFET
FQA8N90C_F109
N-Channel QFET® MOSFET
900 V, 8 A, 1.
9 Ω Features
• 8 A, 900 V, RDS(on) = 1.
9 Ω (Max.
) @ VGS = 10 V, ID = 4 V • Low Gate Charge (Typ.
35 nC)
• Low Crss (Typ.
12 pF)
• 100% Avalanche Tested
• RoHS Compliant
May 2014
Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.
This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.
These devices are suitable for switched mode power supplies, active power factor correction (PFC), and elect...
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