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FQA8N90C_F109

Fairchild Semiconductor
Part Number FQA8N90C_F109
Manufacturer Fairchild Semiconductor
Description N-Channel QFET MOSFET
Published Oct 14, 2015
Detailed Description FQA8N90C_F109 — N-Channel QFET® MOSFET FQA8N90C_F109 N-Channel QFET® MOSFET 900 V, 8 A, 1.9 Ω Features • 8 A, 900 V, RD...
Datasheet PDF File FQA8N90C_F109 PDF File

FQA8N90C_F109
FQA8N90C_F109

Overview
FQA8N90C_F109 — N-Channel QFET® MOSFET FQA8N90C_F109 N-Channel QFET® MOSFET 900 V, 8 A, 1.
9 Ω Features • 8 A, 900 V, RDS(on) = 1.
9 Ω (Max.
) @ VGS = 10 V, ID = 4 V • Low Gate Charge (Typ.
35 nC) • Low Crss (Typ.
12 pF) • 100% Avalanche Tested • RoHS Compliant May 2014 Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.
This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.
These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
D G DS TO-3PN Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds Thermal Characteristics Symbol RθJC RθCS RθJA Parameter Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Case-to-Sink, Typ.
Thermal Resistance, Junction-to-Ambient, Max.
G S (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) FQA8N90C_F109 900 8.
0 5.
1 32 ± 30 850 8.
0 24 4.
0 240 1.
92 -55 to +150 300 FQA8N90C_F109 0.
52 0.
24 40 Unit V A A A V mJ A mJ V/ns W W/°C °C °C Unit °C/W °C/W °C/W ©2007 Fairchild Semiconductor Corporation FQA8N90C_F109 Rev C2 1 www.
fairchildsemi.
com FQA8N90C_F109 — N-Channel QFET® MOSFET Package Marking and Ordering Information Part Number FQA8N90C_F109 Top Mark FQA8N90C Package TO-3PN Packing Method Tube Reel Size N/A Tape Width N/A Quantity 30 units Electrical Cha...


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