FDB035N10A — N-Channel PowerTrench® MOSFET FDB035N10A N-Channel PowerTrench® MOSFET 100 V, 214 A, 3.
5 mΩ November 2013 Features • RDS(on) = 3.
0 mΩ ( Typ.
) @ VGS = 10 V, ID = 75 A • Fast Switching Speed • Low Gate Charge, QG = 89 nC ( Typ.
) • High Performance Trench Technology for Extremely Low RDS(on) • High Power and Current Handling Capability • RoHS Compliant Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
Applications • Synchronous Rectification for ATX / Server / Telecom PSU • Battery Protection Circuit • Motor drives...

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