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FDB035N10A

Fairchild Semiconductor
Part Number FDB035N10A
Manufacturer Fairchild Semiconductor
Description N-Channel PowerTrench MOSFET
Published Oct 14, 2015
Detailed Description FDB035N10A — N-Channel PowerTrench® MOSFET FDB035N10A N-Channel PowerTrench® MOSFET 100 V, 214 A, 3.5 mΩ November 2013...
Datasheet PDF File FDB035N10A PDF File

FDB035N10A
FDB035N10A

Overview
FDB035N10A — N-Channel PowerTrench® MOSFET FDB035N10A N-Channel PowerTrench® MOSFET 100 V, 214 A, 3.
5 mΩ November 2013 Features • RDS(on) = 3.
0 mΩ ( Typ.
) @ VGS = 10 V, ID = 75 A • Fast Switching Speed • Low Gate Charge, QG = 89 nC ( Typ.
) • High Performance Trench Technology for Extremely Low RDS(on) • High Power and Current Handling Capability • RoHS Compliant Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
Applications • Synchronous Rectification for ATX / Server / Telecom PSU • Battery Protection Circuit • Motor drives and Uninterruptible Power Supplies • Micro Solar Inverter D D G S D2-PAK G S MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol Parameter FDB035N10A VDSS VGSS ID IDM EAS dv/dt PD Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current - Continuous (TC = ...


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