2SK3302
TOSHIBA Field Effect
Transistor Silicon N Channel MOS Type (π-MOSV)
2SK3302
Switching
Regulator and DC-DC Converter Applications
Unit: mm
• Low drain-source ON resistance: RDS (ON) = 11.
5 Ω (typ.
) • High forward transfer admittance: |Yfs| = 0.
4 S (typ.
) • Low leakage current: IDSS = 100 μA (max) (VDS = 500 V) • Enhancement model: Vth = 2.
0~4.
0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage
Drain current
DC (Note 1) Pulse (Note 1)
Drain power dissipation
Single pulse avalanche energy (Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)...