FQA90N15_F109 — N-Channel QFET® MOSFET
FQA90N15_F109
N-Channel QFET® MOSFET
150 V, 90 A, 18 mΩ
Features
• RDS(on) = 18 mΩ (Max.
) @ VGS = 10 V, ID = 45 A • Low Gate Charge (Typ.
220 nC) • Low Crss (Typ.
200 pF) • 100% Avalanche Tested • 175°C Maximum Junction Memperature Rating
July 2015
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for low voltage applications s...