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FQA90N15_F109

Fairchild Semiconductor
Part Number FQA90N15_F109
Manufacturer Fairchild Semiconductor
Description N-Channel MOSFET
Published Oct 20, 2015
Detailed Description FQA90N15_F109 — N-Channel QFET® MOSFET FQA90N15_F109 N-Channel QFET® MOSFET 150 V, 90 A, 18 mΩ Features • RDS(on) = 18 ...
Datasheet PDF File FQA90N15_F109 PDF File

FQA90N15_F109
FQA90N15_F109

Overview
FQA90N15_F109 — N-Channel QFET® MOSFET FQA90N15_F109 N-Channel QFET® MOSFET 150 V, 90 A, 18 mΩ Features • RDS(on) = 18 mΩ (Max.
) @ VGS = 10 V, ID = 45 A • Low Gate Charge (Typ.
220 nC) • Low Crss (Typ.
200 pF) • 100% Avalanche Tested • 175°C Maximum Junction Memperature Rating July 2015 Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for low voltage applications s...


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