IGBT
Advance Technical Information HiPerFASTTM IGBT IXGR 32N90B2D1 with Fast Diode Electrically Isolated Base V I CES VC25 t CE(sat) fi typ = 900 V = 47 A = 2.9 V = 150 ns Symbol Test Conditions VCES VCGR TJ = 25OC to 150OC TJ = 25OC to 150OC; RGE = 1 MΩ VGES VGEM Continuous Transient IC25 IC110 ICM TC = 25OC TC = 110OC TC = 25OC, 1 ms SSOA (RBSOA) PC...
IXYS